![]() 12, 13, 14 In particular, the p-MTJ spin-valve structure with a top CoFeB free layer has recently been shown to achieve a high TMR ratio at the BEOL temperature of 400 ☌. ![]() These spin-valves need to achieve a high tunneling magnetoresistance (TMR) ratio (>150%), high thermal stability (Δ >74) and a high switching current ( J c ~1 × 10 2 MA cm −2) at the back end of line (BEOL) temperature of 400 ☌. 4, 5, 6, 7, 8, 9, 10, 11 CoFeB/MgO-based p-MTJ spin-valves have been widely used for realizing the terra-bit-level integration of perpendicular spin-transfer-torque magnetic random access memory cells. 1, 2, 3 Perpendicular spin-transfer-torque magnetic random access memory cells fabricated with a selective transistor and a bi-stable resistance (1T1R) have been studied intensively as a promising solution to overcome this issue in current dynamic random access memory cells, where a bi-stable resistance is formed with a perpendicular magnetic tunnel junction (p-MTJ) spin-valve. Recently, dynamic random access memory cells fabricated with a selective transistor and a capacitor (1T1C) have faced a physical limitation when they are scaled down to dimensions below 20 nm.
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